Film characteristics of ZnS:Mn phosphor prepared by metal precursor sulfurization and its application to inorganic electroluminescent devices

Abstract

A ZnS:Mn phosphor film for an inorganic electroluminescent (EL) device fabricated by metal precursor sulfurization was evaluated. Metallic ZnMn was thermally evaporated at room temperature and then sulfurized by sulfur gas flowing in a tube furnace at various temperatures from 400 to 800 °C. X-ray diffraction, energy dispersive x-ray spectroscopy, and photoluminescence observations indicated that a ZnS:Mn phosphor layer was formed after sulfurization. A thick-dielectric EL device was manufactured using the obtained ZnS:Mn phosphor. The EL luminance of 216 cd/m2 at 1.0 kHz was measured when the phosphor layer was sulfurized at 500 °C. A charge density versus voltage (Q-V) curve was also analyzed to evaluate the EL phosphor characteristics.