Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors-Reference-Cited by-同舟云学术

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Improvement of negative-bias-illumination-stress stability in all-transparent double-gate InGaZnO thin-film transistors

Published:2015-03 Issue:2 Volume:33 Page:020602
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Jeon Da-Bin,Ryu Min-Ki,Byun Chun-Won,Yang Jong-Heon,Hwang Chi-Sun,Yoon Sung-Min

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4906570

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Serially connected tantalum and amorphous indium tin oxide for sensing the temperature increase in IGZO thin-film transistor backplanes;Journal of Information Display;2023-03-08

2. Impacts of Bottom-gate Bias Control for Low-voltage Memory Operations of Charge-trap Memory Thin Film Transistors using Oxide Semiconductors;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2019-02-28

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