Heterojunction interface formation: Si on Ge, GaAs, and CdS-Reference-Cited by-同舟云学术

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Heterojunction interface formation: Si on Ge, GaAs, and CdS

Published:1983-04 Issue:2 Volume:1 Page:692-694
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Katnani A. D.,Stoffel N. G.,Daniels R. R.,Zhao Te‐Xiu,Margaritondo G.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571979

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures;Journal of Nanomaterials;2019-03-24

2. The Role of Photoemission Spectroscopies in Heterojunction Research;Characterization of Semiconductor Heterostructures and Nanostructures;2013

3. The role of photoemission spectroscopies in heterojunction research;Characterization of Semiconductor Heterostructures and Nanostructures;2008

4. Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsets;Thin Solid Films;1999-04

5. Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

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