Si metal–oxide semiconductor field effect transistor with 70-nm slotted gates for study of quasi-one-dimensional quantum transport-Reference-Cited by-同舟云学术

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Si metal–oxide semiconductor field effect transistor with 70-nm slotted gates for study of quasi-one-dimensional quantum transport

Published:1988-11 Issue:6 Volume:6 Page:1841
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Scott-Thomas J. H. F.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetotransport in multiple narrow silicon inversion channels opened electrostatically into a two-dimensional electron gas;Physical Review B;1992-04-15

2. Conductance oscillations periodic in the density of one-dimensional electron gases;Physical Review B;1990-08-15

3. Sub-100 nm electronic devices and quantum-effects research using x-ray nanolithography;Microelectronic Engineering;1990-04

4. Quantum Device Modeling with the Convolution Method;Electronic Properties of Multilayers and Low-Dimensional Semiconductor Structures;1990

5. Lateral Surface Superlattices and Quasi-One-Dimensional Structures in GaAs;Science and Engineering of One- and Zero-Dimensional Semiconductors;1990

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