Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor
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Published:1999-09
Issue:5
Volume:17
Page:3038-3044
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ISSN:0734-2101
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Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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language:en
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Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Author:
Chung S. R.,Chen J. C.,Worchesky T. L.
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics