Resistive memory multilayer structure with self-rectifying and forming free properties along with their modification by adding a hafnium nanoparticle midlayer-Reference-Cited by-同舟云学术

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Resistive memory multilayer structure with self-rectifying and forming free properties along with their modification by adding a hafnium nanoparticle midlayer

Published:2016-11-18 Issue:2 Volume:35 Page:021501
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Michelakaki Irini¹,Bousoulas Panagiotis¹,Maragos Nikos²,Boukos Nikos³,Tsoukalas Dimitris¹

Affiliation:

1. Department of Applied Physics, National Technical University of Athens, 15780 Zografou, Greece

2. Institute for Nuclear and Particles Physics, N.C.S.R. “Demokritos,” 15341 Aghia Paraskevi, Greece

3. Institute of Nanoscience and Nanotechnology, N.C.S.R. “Demokritos,” 15341 Aghia Paraskevi, Greece

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Nickel Dissolution Process for Multilayer Electroforming to Achieve Ultrahigh Adhesion Strength;Materials;2023-09-30

2. 3D Systems with Stochastic Architecture;Fundamentals of Organic Neuromorphic Systems;2021-08-27

3. High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film;ACS Applied Materials & Interfaces;2017-10-16

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