Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors-Reference-Cited by-同舟云学术

Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors

Published:2015-11 Issue:6 Volume:33 Page:061506
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kurishima Kazunori,Nabatame Toshihide,Shimizu Maki,Mitoma Nobuhiko,Kizu Takio,Aikawa Shinya,Tsukagoshi Kazuhito,Ohi Akihiko,Chikyow Toyohiro,Ogura Atsushi

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4928763

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2. Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3;Japanese Journal of Applied Physics;2021-02-11

3. Effect of carbon doping on threshold voltage and mobility of In-Si-O thin-film transistors;Journal of Vacuum Science & Technology B;2018-11

4. Reliability of Al2O3/In-Si-O-C Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress;ECS Transactions;2018-07-23

5. Improved leakage current properties of ZrO2/(Ta/Nb)Ox-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors;Thin Solid Films;2018-06