Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF3 and O2-Reference-Cited by-同舟云学术

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Effect of oxygen concentration on the spike formation during reactive ion etching of SiC using the mixed gas plasma of NF3 and O2

Published:2007-03 Issue:2 Volume:25 Page:391-400
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Tasaka A.,Watanabe E.,Kai T.,Shimizu W.,Kanatani T.,Inaba M.,Tojo T.,Tanaka M.,Abe T.,Ogumi Z.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2699473

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Significance of plasma-surface interactions in the etch behavior of low-k materials;Journal of Vacuum Science & Technology A;2023-11-13

2. Spectroscopic Analysis of NF3 Plasmas with Oxygen Additive for PECVD Chamber Cleaning;Coatings;2023-01-03

3. Study of Silicon Etching Modes in Combined Plasma Discharge for the Formation of Optoelectronic Structures;Bulletin of the Russian Academy of Sciences: Physics;2022-12

4. Plasma Etching of Silicon at a High Flow and a High Pressure of NF3 in Reactive Ion Etching;Journal of the Korean Physical Society;2019-06

5. Smoothing single-crystalline SiC surfaces by reactive ion etching using pure NF3 and NF3/Ar mixture gas plasmas;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-09

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