Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness-Reference-Cited by-同舟云学术

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Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness

Published:2007 Issue:6 Volume:25 Page:2508
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

La Young-Hye,Park Sang-Min,Meagley Robert P.,Leolukman Melvina,Gopalan Padma,Nealey Paul F.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photopatterning of Cross-Linkable Epoxide-Functionalized Block Copolymers and Dual-Tone Nanostructure Development for Fabrication Across the Nano- and Microscales;Small;2015-01-21

2. Rheological Study of Order-to-Disorder Transitions and Phase Behavior of Block Copolymer–Surfactant Complexes Containing Hydrogen-Bonded Small Molecule Additives;Macromolecules;2014-11-12

3. Mechanical properties of polymeric nanostructures fabricated through directed self-assembly of symmetric diblock and triblock copolymers;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-11

4. Top-Down versus Bottom-Up Patterning of Polymers;Polymer Science: A Comprehensive Reference;2012

5. Hydrogen Bond Assisted Assembly of Well-Ordered Polyhedral Oligomeric Silsesquioxane–Block Copolymer Composites;Macromolecules;2011-08-10

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