Effects of bismuth on wide-depletion-width GaInNAs solar cells-Reference-Cited by-同舟云学术

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Effects of bismuth on wide-depletion-width GaInNAs solar cells

Published:2008 Issue:3 Volume:26 Page:1053
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Ptak A. J.,France R.,Jiang C.-S.,Reedy R. C.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimized molecular beam epitaxy process for lattice-matched narrow-bandgap (0.8 eV) GaInNAsSb solar junctions;Solar Energy Materials and Solar Cells;2022-12

2. Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant;Optical Materials Express;2020-01-03

3. Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures;Bismuth-Containing Alloys and Nanostructures;2019

4. Terahertz excitation spectra of GaAsBi alloys;Journal of Physics D: Applied Physics;2018-09-06

5. Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices;Journal of Photonics for Energy;2017-04-07

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