Energy band gaps of InN containing oxygen and of the In[sub x]Al[sub 1−x]N interface layer formed during InN film growth-Reference-Cited by-同舟云学术

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Energy band gaps of InN containing oxygen and of the In[sub x]Al[sub 1−x]N interface layer formed during InN film growth

Published:2004 Issue:3 Volume:22 Page:954
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:J. Vac. Sci. Technol. A

Author:

Alexandrov Dimiter,Scott K.,Butcher A.,Wintrebert-Fouquet Marie

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation and experimental study of InN nanoparticles synthesized by ion implantation technology;Journal of Molecular Modeling;2024-07

2. Characterization of InN films prepared using magnetron sputtering at variable power;Materials Letters;2018-05

3. Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE;Vacuum;2015-01

4. Growth and characteristic of high orientation indium nitride films grown on (100) silicon substrate;International Journal of Nanotechnology;2014

5. Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE;Journal of Alloys and Compounds;2012-02

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