Bond strain, chemical induction, and OH incorporation in low-temperature (350–100 °C) plasma deposited silicon dioxide films
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Published:2000
Issue:3
Volume:18
Page:1764
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Gupta A.,Parsons G. N.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
19 articles.
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