On the design and characterization of a novel arsine cracking furnace utilizing catalytic decomposition of AsH3 to yield a purely monomeric source of arsenic for molecular beam epitaxial growth of GaAs

Author:

Kapitan L. W.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Sources of Atomic and Molecular Beams;Molecular Beam Epitaxy;1996

2. Chemical beam epitaxy;Critical Reviews in Solid State and Materials Sciences;1992-01

3. Molecular beam epitaxial growth of GaAs and other compound semiconductors;Thin Solid Films;1991-12

4. AsH3Cracking Characteristics in Gas Source Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1990-12-20

5. Design and operation of a valved solid-source As2 oven for molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-03

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