Depth distribution of Mn in Mn doped GaAs using secondary ion mass spectrometry-Reference-Cited by-同舟云学术

Depth distribution of Mn in Mn doped GaAs using secondary ion mass spectrometry

Published:2016-05 Issue:3 Volume:34 Page:03H125
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Karki Vijay¹,Bhattacharya Debarati²,Chandrasekhar Rao Turumella V.³,Alamelu Devanathan¹

Affiliation:

1. Fuel Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India

2. Solid State Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India

3. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India

Funder

Bhabha Atomic Research Centre (BARC)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4943948

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