Engineering anisotropic magnetoresistance of Hall bars with interfacial organic layers-Reference-Cited by-同舟云学术

Engineering anisotropic magnetoresistance of Hall bars with interfacial organic layers

Published:2020-07 Issue:4 Volume:38 Page:040602
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Park Jun Hong¹²³^ORCID,Ribeiro Mario¹²,Pham Thi Kim Hang²,Lee Nyun Jong⁴,Eom Tai-woon⁵,Jo Junhyeon⁶,Park Seung-Young⁷,Rhim Sonny H.⁴,Nakamura Kohji⁸,Yoo Jung-Woo⁶,Kim Tae Hee¹²

Affiliation:

1. Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul 03760, South Korea

2. Department of Physics, Ewha Womans University, Seoul 03760, South Korea

3. School of Materials Science and Engineering, Gyeongsang National University, Jinju 52828, South Korea

4. Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, South Korea

5. RNDWARE Co., Ltd., Daejeon 34133, South Korea

6. School of Materials Science and Engineering-Low Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea

7. Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, South Korea

8. Department of Physics Engineering, Mie University, Tsu, Mie 514-8507, Japan

Funder

National Research Foundation of Korea

National Research Council of Science and Technology

Ministry of Science and ICT, South Korea

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/6.0000222

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Field-driven Modulation of Spin Hall Magnetoresistance in Nanoscale-layered Pt/IrMn₃/NiFe Heterostructures;Journal of Magnetics;2022-12-31