Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks-Reference-Cited by-同舟云学术

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Inhibiting spontaneous etching of nanoscale electron beam induced etching features: Solutions for nanoscale repair of extreme ultraviolet lithography masks

Published:2008 Issue:3 Volume:26 Page:963
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lassiter Matthew G.,Liang Ted,Rack Philip D.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron beam-induced etching of SiO₂, Si₃N₄, and poly-Si assisted by CF₄/O₂ remote plasma;Journal of Vacuum Science & Technology A;2023-01

2. SiO₂ etching and surface evolution using combined exposure to CF₄/O₂ remote plasma and electron beam;Journal of Vacuum Science & Technology A;2022-12

3. Transformation and degradation of metal halide perovskites induced by energetic electrons and their practical implications;Nano Futures;2021-07-13

4. Charged particle single nanometre manufacturing;Beilstein Journal of Nanotechnology;2018-11-14

5. Pattern edge roughness study on OMOG mask repair;Photomask Technology 2018;2018-10-03

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