CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique-Reference-Cited by-同舟云学术

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CV measurements on LaLuO3 stack metal-oxide-semiconductor capacitor using a new three-pulse technique

Published:2011-01 Issue:1 Volume:29 Page:01AB03
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Sedghi N.,Mitrovic I. Z.,Hall S.,Lopes J. M. J.,Schubert J.

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3533267

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. (Invited) Properties of Metal/High-kOxide/Graphene Structures;ECS Transactions;2017-08-16

2. Analysis of electron capture at oxide traps by electric field injection;Applied Physics Letters;2013-05-27

3. Electrical instability in LaLuO3 based metal–oxide–semiconductor capacitors and role of the metal electrodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01

4. Interfacial and electrical properties of HfO2gate dielectrics grown on GaAs by atomic layer deposition using different oxidants;Journal of Physics D: Applied Physics;2012-10-09

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