Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry-Reference-Cited by-同舟云学术

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Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

Published:2019-11 Issue:6 Volume:37 Page:062927
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B
language:en
Short-container-title:Journal of Vacuum Science & Technology B

Author:

Fursenko Oksana¹,Lukosius Mindaugas¹,Bauer Joachim²,Villringer Claus²,Lux Helge²,Bärwolf Florian¹,Lisker Marco¹,Mai Andreas¹

Affiliation:

1. IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Department of Photonics, Laser and Plasma Technologies, Technical University of Applied Sciences Wildau, Hochschulring 1, 15745 Wildau, Germany

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.5122792

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001);ACS Applied Materials & Interfaces;2023-07-21

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