In situ detection of InGaAs strained‐layer relaxation by laser light scattering-Reference-Cited by-同舟云学术

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In situ detection of InGaAs strained‐layer relaxation by laser light scattering

Published:1993-07 Issue:4 Volume:11 Page:1796-1801
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Celii F. G.,Files‐Sesler L. A.,Beam E. A.,Liu H.‐Y.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.578428

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3. Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD;SPIE Proceedings;2003-02-06

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