Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gases-Reference-Cited by-同舟云学术

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Radio frequency plasma etching of Si/SiO2 by Cl2/O2 : Improvements resulting from the time modulation of the processing gases

Published:1990-11 Issue:6 Volume:8 Page:1185
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

McNevin S. C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An effective process to remove etch damage prior to selective epitaxial growth in 3D NAND flash memory;Semiconductor Science and Technology;2019-07-30

2. Plasma parameters, gas-phase chemistry and Si/SiO2 etching mechanisms in HBr+Cl2+O2 gas mixture: Effect of HBr/O2 mixing ratio;Vacuum;2019-05

3. Peculiarities of Si and SiO2 Etching Kinetics in HBr + Cl2 + O2 Inductively Coupled Plasma;Plasma Chemistry and Plasma Processing;2018-11-10

4. Patterning of Si3N4 Layer in Pulse-Biased Capacitively-Coupled Plasmas for Multi-Level Hard Mask Structures;Journal of Nanoscience and Nanotechnology;2016-11-01

5. Effects of Bias Pulsing on Etching of SiO₂ Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks;Journal of Nanoscience and Nanotechnology;2016-05-01

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