Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy–scanning tunneling microscopy study-Reference-Cited by-同舟云学术

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Monte Carlo derived diffusion parameters for Ga on the GaAs(001)- (2×4) surface: A molecular beam epitaxy–scanning tunneling microscopy study

Published:2000-07 Issue:4 Volume:18 Page:1526-1531
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

LaBella V. P.,Bullock D. W.,Ding Z.,Emery C.,Harter W. G.,Thibado P. M.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.582379

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wafer-scale epitaxial modulation of quantum dot density;Nature Communications;2022-03-28

2. Effect of initial crystallization temperature and surface diffusion on formation of GaAs multiple concentric nanoring structures by droplet epitaxy*;Chinese Physics B;2020-04-01

3. Formation of nearly defect-free nanoripples by sputtering of GaAs (001) surface at high temperature;Surfaces and Interfaces;2019-12

4. XPS analysis of metallic wetting layer in In/GaAs system obtained at different growth temperatures;Journal of Physics: Conference Series;2019-12-01

5. Sidewall Quantum Wires on GaAs (001) Substrates;Physical Review Applied;2019-06-10

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