Structures of GaAs and GaP thin films formed by rf ion‐beam epitaxy-Reference-Cited by-同舟云学术

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Structures of GaAs and GaP thin films formed by rf ion‐beam epitaxy

Published:1975-07 Issue:4 Volume:12 Page:876-878
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Murayama Yoichi

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.568691

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pulsed laser deposition of thin films;Handbook of Thin Films;2002

2. Metal ion production by ion bombardment;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-09

3. Fundamental characteristics of built‐in high‐frequency coil‐type sputtering apparatus;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-03

4. Sputter Type HF Ion Source for Ion Beam Deposition Apparatus;Japanese Journal of Applied Physics;1987-05-20

5. Subject Categories and References Year 1975;Molecular Beam Epitaxy of III–V Compounds;1984

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