On the spatial resolution of two-dimensional doping profiles as measured using secondary ion mass spectrometry tomography
-
Published:1994-01
Issue:1
Volume:12
Page:116
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recombination dynamics of traps in SiO 2 layer on Si by scanning capacitance microscopy;Applied Physics A: Materials Science & Processing;1998-03-01
2. Depth dependent carrier density profile by scanning capacitance microscopy;Applied Physics Letters;1997-09-15
3. Practical perspective of shallow junction analysis;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
4. Characterization of two-dimensional dopant profiles: Status and review;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-01
5. Atomic Spectrometry Updates—References;J. Anal. At. Spectrom.;1995