Magnetron enhanced reactive ion etching of GaAs in CH4/H2/Ar: Surface damage study-Reference-Cited by-同舟云学术

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Magnetron enhanced reactive ion etching of GaAs in CH4/H2/Ar: Surface damage study

Published:1994-07 Issue:4 Volume:12 Page:1356-1359
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

McLane G. F.,Buchwald W. R.,Casas L.,Cole M. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579321

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical evaluation of process-damaged layers using p-n junctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-05

2. Dry etching and induced damage;Microelectronic Engineering;1996-09

3. Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-09

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