Size-dependent resonant tunneling and storing of electrons in a nanocrystalline silicon floating-gate double-barrier structure-Reference-Cited by-同舟云学术

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Size-dependent resonant tunneling and storing of electrons in a nanocrystalline silicon floating-gate double-barrier structure

Published:2004 Issue:2 Volume:22 Page:678
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Wu Liangcai,Dai Min,Huang Xinfan,Li Wei,Chen Kunji

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resonant tunneling with high peak to valley current ratio in SiO2/nc-Si/SiO2 multi-layers at room temperature;Journal of Applied Physics;2014-01-28

2. Room-Temperature Multi-Peak NDR in nc-Si Quantum-Dot Stacking MOS Structures for Multiple Value Memory and Logic;Chinese Physics Letters;2013-07

3. Abnormal Capacitance Hysteresis Phenomena in Stacked Nanocrystalline-Si Based Metal Insulator Semiconductor Memory Structure;Key Engineering Materials;2012-12

4. Energetic Ion Irradiation as Advanced Process for Functionalization of Silicon Nanocrystals in a SiO₂ Matrix;Journal of Nano Research;2012-07

5. Comparison of silicon nanocrystals embedded silicon oxide films by sputtering and PECVD;Thin Solid Films;2011-05

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