Enhancement and suppression of the formation of porous silicon-Reference-Cited by-同舟云学术

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Enhancement and suppression of the formation of porous silicon

Published:1995-05 Issue:3 Volume:13 Page:1230
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Duttagupta S. P.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy;Journal of the Korean Physical Society;2023-11-20

2. Insights into the growth of hexagonal Si crystals using Al-based nano absorber;Semiconductor Science and Technology;2022-03-08

3. Porous Silicon Based MEMS;Handbook of Silicon Based MEMS Materials and Technologies;2015

4. Structural and optical properties of porous silicon prepared by anodic etching of irradiated silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2013-11

5. Enhanced Suppression of the Formation of Porous Silicon Based on Secondary Knocked-On Effect in FIB;ECS Transactions;2013-04-01

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