SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering-Reference-Cited by-同舟云学术

SIMS depth profiling and topography studies of repetitive III–V trenches under low energy oxygen ion beam sputtering

Published:2016-05 Issue:3 Volume:34 Page:03H131
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Gorbenko Viktoriia¹,Bassani Franck²,Merkulov Alexandre³,Baron Thierry²,Martin Mickael²,David Sylvain²,Barnes Jean-Paul⁴

Affiliation:

1. Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France; Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France; and CNRS, LTM, F-38000 Grenoble, France

2. Univ. Grenoble Alpes, LTM, F-38000 Grenoble, France and CNRS, LTM, F-38000 Grenoble, France

3. CAMECA SAS, 29 Quai des Gresillons, 92622 Gennevilliers Cedex, France

4. Univ. Grenoble Alpes, F-38000 Grenoble, France and CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

Funder

Agence Nationale de la Recherche (ANR)

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4944632

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mitigation of interfacial dielectric loss in aluminum-on-silicon superconducting qubits;npj Quantum Information;2024-08-14