Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)
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Published:2003
Issue:6
Volume:21
Page:2821
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Toyota E.,Washio M.,Watanabe H.,Sumitani H.
Publisher
American Vacuum Society
Subject
General Engineering