Influence of the positive ion composition on the ion-assisted chemical etch yield of SrTiO3 films in Ar∕SF6 plasmas
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.2713410
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma;Journal of Vacuum Science & Technology A;2020-03
2. In situ investigation of magnetron sputtering plasma used for the deposition of multiferroic BiFeO3 thin films;Journal of Materials Science: Materials in Electronics;2017-05-23
3. Plasma etching dynamics of CaxBa1−xNb2O6 (CBN) material;Microelectronic Engineering;2013-10
4. Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching;Journal of Applied Physics;2009-09-15
5. Ion chemistry in gaseous discharges at atmospheric pressure;Plasma Sources Science and Technology;2009-07-15
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