Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer-Reference-Cited by-同舟云学术

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Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

Published:2021-12 Issue:6 Volume:39 Page:063410
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Zhu Xiaolong¹,Wu Jianqiang¹,Hu Qimin¹,Hao Xia²,Li Wei¹,Liu Cai³,Su Rong⁴

Affiliation:

1. College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

2. Institute of New Energy and Low-carbon Technology, Sichuan University, Chengdu 610027, China

3. Guangdong Provincial Key Laboratory of Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China

4. Tongwei Solar (Chengdu), Chengdu 610299, China

Funder

National Natural Science Foundation of China

Science and technology program of Sichuan province

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0001257

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of structural and optical characteristics of low temperature nucleated thick ZnTe epitaxy on GaAs (211) substrates by MBE;Optical Materials;2024-10

2. Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates;Journal of Semiconductors;2024-09-01

3. Exploring epitaxial growth of ZnTe thin films on Si substrates;Vacuum;2022-08

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