Oxygen magnetically enhanced reactive ion etching of silylated resist patterns-Reference-Cited by-同舟云学术

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Oxygen magnetically enhanced reactive ion etching of silylated resist patterns

Published:1992-09 Issue:5 Volume:10 Page:2222
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Dijkstra Han J.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Damage Induced by Dry Etching;Handbook of Advanced Plasma Processing Techniques;2000

2. Application of dichromated gelatin for dry developed lithographic techniques on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

3. Oxygen ECR stream etching of dichromated gelatin films;Thin Solid Films;1998-04

4. Reactive Ion Etching of Silicon Containing Polynorbornenes;Journal of The Electrochemical Society;1998-04-01

5. Wet silylation and oxygen plasma development of photoresists: A mature and versatile lithographic process for microelectronics and microfabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-09

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