Fabrication of n-channel metal–oxide–semiconductor field-effect transistors with 0.2 μm gate lengths in 500 Å thin film silicon on sapphire
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Published:1992-11
Issue:6
Volume:10
Page:2954
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Author:
de la Houssaye P. R.
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
1 articles.
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