Multiple initial chemisorption sites: Al on GaAs(110)
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.575346
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum;Journal of Crystal Growth;2002-12
2. Simulations of metalorganic chemical vapor deposition and of cluster formation on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-07
3. Reaction of Au4 and Ga(CH3)3 with GaAs(110);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05
4. Simulation of Atomic and Molecular Processes at Solid Surfaces;Atomistic Simulation of Materials;1989
5. Reaction of dimers and diatomic molecules with GaAs(110): Molecular dynamics computer simulations;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-07
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