High-speed single-layer-resist process and energy-dependent aspect ratios for 0.2-μm electron-beam lithography-Reference-Cited by-同舟云学术

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High-speed single-layer-resist process and energy-dependent aspect ratios for 0.2-μm electron-beam lithography

Published:1994-11 Issue:6 Volume:12 Page:3874
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Murai Fumio

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Image collapse issues in photoresist;SPIE Proceedings;2001-08-24

2. Development of analysis system for F 2 -excimer laser photochemical processes;Advances in Resist Technology and Processing XVII;2000-06-23

3. Development of Photochemical Analysis System for F2-Excimer Laser Lithography Processes;Japanese Journal of Applied Physics;2000-04-15

4. Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match;Japanese Journal of Applied Physics;1999-12-30

5. Negative electron-beam nanofabrication resist using acid-catalyzed protection of polyphenol provided by phenylcarbinol;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-11

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