Surface topography of Ar+ bombarded GaAs(100) at various temperatures-Reference-Cited by-同舟云学术

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Surface topography of Ar+ bombarded GaAs(100) at various temperatures

Published:1987-03 Issue:2 Volume:5 Page:179-183
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Bhattacharya S. R.,Ghose D.,Basu D.,Karmohapatro S. B.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.574099

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2. Growth process of GaAs ripples as a function of incident Ar-ion dose;Applied Surface Science;2012-02

3. Ion beam induced mixing of co-sputtered Au–Ni films analyzed by Rutherford backscattering spectrometry;Applied Surface Science;2008-12

4. Nano- and microcrystalline particles of palladium formed on hydrogen-bombarded palladium surfaces; their structure and formation kinetics;The European Physical Journal Applied Physics;2003-02-27

5. Evolution of surface morphology of ion sputtered GaAs();Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-06

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