Electric field distributions in a molecular-beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance-Reference-Cited by-同舟云学术

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Electric field distributions in a molecular-beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance

Published:1989-07 Issue:4 Volume:7 Page:804
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Shen H.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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