Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO2 thin films-Reference-Cited by-同舟云学术

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Substrate effects on metal-insulator transition characteristics of rf-sputtered epitaxial VO2 thin films

Published:2011-07 Issue:4 Volume:29 Page:041502
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Cui Yanjie,Ramanathan Shriram

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.3584817

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-temperature growth of high-quality VO2 epitaxial film on c-plane sapphire by reactive magnetron sputtering;Applied Physics Letters;2024-08-12

2. High-speed sensing of rf signals with phase-change materials;Physical Review Applied;2024-07-08

3. Strain effects on insulator-to-metal transition and electronic structure in VO2;Physical Review B;2024-04-10

4. Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation;Journal of Applied Physics;2024-03-28

5. Strong Substrate Influence on Atomic Structure and Properties of Epitaxial VO₂ Thin Films;Advanced Materials Interfaces;2023-12-11

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