Kinetics of the heteroepitaxial growth of Ge on Si(001)-Reference-Cited by-同舟云学术

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Kinetics of the heteroepitaxial growth of Ge on Si(001)

Published:2002 Issue:3 Volume:20 Page:1251
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Yam V.,Thanh Vinh Le,Boucaud P.,Débarre D.,Bouchier D.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Strategic review on chemical vapor deposition technology-derived 2D material nanostructures for room-temperature gas sensors;Journal of Materials Chemistry C;2023

4. Electrical Activity of Surface Steps on a Sapphire Crystal Substrate for Epitaxy;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2018-09

5. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers;Scientific Reports;2016-03-04

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