Molecular-beam epitaxial growth and characterization of InSb on Si-Reference-Cited by-同舟云学术

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Molecular-beam epitaxial growth and characterization of InSb on Si

Published:1989-03 Issue:2 Volume:7 Page:345
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Chyi J.-I.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of InSb photodetectors on Si substrates;Journal of Physics D: Applied Physics;2003-02-14

2. III-V infrared detectors on Si substrates;SPIE Proceedings;2000-04-13

3. Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates;Semiconductor Science and Technology;1992-03-01

4. quantum well structures grown by molecular beam epitaxy;Superlattices and Microstructures;1992-01

5. Molecular beam epitaxial growth of GaAs and other compound semiconductors;Thin Solid Films;1991-12

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