Diffusion-barrier properties of Ta[sub 1−x]W[sub x] alloy films and silicidation-induced Cu penetration in Cu∕Si contacts-Reference-Cited by-同舟云学术

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Diffusion-barrier properties of Ta[sub 1−x]W[sub x] alloy films and silicidation-induced Cu penetration in Cu∕Si contacts

Published:2005 Issue:1 Volume:23 Page:280
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Noya Atsushi,Takeyama Mayumi B.,Sase Touko

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relationship between 〈111〉-oriented Cu film and thin Ta–W–N barrier;Japanese Journal of Applied Physics;2020-05-15

2. Growth of 〈111〉-oriented Cu layer on thin TaWN films;Japanese Journal of Applied Physics;2017-06-29

3. Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si;Japanese Journal of Applied Physics;2014-01-29

4. Diffusion Barriers;Advanced Interconnects for ULSI Technology;2012-02-17

5. Novel Cu/Si composites: A sol-gel-derived Al2O3 film as barrier to control interfacial reaction;Journal of Materials Research;2010-11

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