High-temperature stable Ir–Al/n-GaAs Schottky diodes: Effect of the barrier height controlling-Reference-Cited by-同舟云学术

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High-temperature stable Ir–Al/n-GaAs Schottky diodes: Effect of the barrier height controlling

Published:1996-03-01 Issue:2 Volume:14 Page:657
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lalinský T.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of sputtering gas on the microstructure of Ir thin films deposited by HiPIMS and pulsed DC sputtering;Surface and Coatings Technology;2021-04

2. Comparative Studies on Low-Resistance Pd-Based Ohmic Contacts on p-GaAsSb;Journal of The Electrochemical Society;2007

3. Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAl[sub x]Ga[sub 1−x] as a metallization;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999

4. Iridium-based multilayer contacts to n-GaAs;Solid-State Electronics;1998-03

5. Iridium thin films deposited by radio-frequency magnetron sputtering;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-03

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