Electronic band gap of Si/SiO2 quantum wells: Comparison ofab initiocalculations and photoluminescence measurements-Reference-Cited by-同舟云学术

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Electronic band gap of Si/SiO2 quantum wells: Comparison ofab initiocalculations and photoluminescence measurements

Published:2007-11 Issue:6 Volume:25 Page:1500-1504
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Wagner J.-M.,Seino K.,Bechstedt F.,Dymiati A.,Mayer J.,Rölver R.,Först M.,Berghoff B.,Spangenberg B.,Kurz H.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2779040

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