Molecular beam epitaxial growth of ultralow absorption GaN high electron mobility transistor material on sapphire substrates for infrared transparent conductors
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Published:2013-05
Issue:3
Volume:31
Page:03C101
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ISSN:2166-2746
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Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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language:en
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Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Author:
Hoke William E.,Kirchner Amanda J.,Mosca John J.,Resler Daniel P.,Kennedy Theodore D.,Holz Michael,Kerr Amanda J.,Collins Steven R.
Publisher
American Vacuum Society
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials