High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact-Reference-Cited by-同舟云学术

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High-brightness GaN-based light-emitting diode with indium tin oxide based transparent ohmic contact

Published:2004 Issue:4 Volume:22 Page:1851
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Kim Soo Young,Jang Ho Won,Lee Jong-Lam

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, optical, and electrical properties of E-beam and sputter-deposited ITO films for LED applications;Electronic Materials Letters;2011-06

2. Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics;Applied Surface Science;2008-12

3. A Method for Current Spreading Analysis and Electrode Pattern Design in Light-Emitting Diodes;IEEE Transactions on Electron Devices;2008-05

4. Sputtered Indium-Tin-Oxide on p-GaN;Journal of The Electrochemical Society;2008

5. ITO∕Ti∕Au Ohmic contacts on n-type ZnO;Applied Physics Letters;2006-05

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