The effect of substrate–epitaxial interface on the capacitance–voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide-Reference-Cited by-同舟云学术

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The effect of substrate–epitaxial interface on the capacitance–voltage characteristics of Schottky barriers formed on sputtered films of gallium arsenide

Published:1982-03 Issue:3 Volume:20 Page:807-810
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Kulkarni A. K.,Soukup R. J.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571490

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Circuit modeling of GaAs: a‐SiC interfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1989-05

2. SiC as a Potential FET Gate Insulator;Springer Proceedings in Physics;1989

3. Complex impedance versus frequency analysis of Al:SiC:Al metal–insulator–metal structures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-05

4. Al–GaAs (001) Schottky barrier formation;Journal of Applied Physics;1983-08

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