Activation and recrystallization of ion‐implanted amorphous silicon films by rapid thermal annealing
Author:
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
http://avs.scitation.org/doi/pdf/10.1116/1.575843
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication;Japanese Journal of Applied Physics;2008-03-14
2. Evolution of Surface Topography of as-Grown Si Films near Amorphous-to-Polycrystalline Transition;Journal of The Electrochemical Society;2004
3. Improving the quality of electroplated copper films by rapid thermal annealing;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
4. Single-electron effects in highly doped polysilicon nanowires;Physica E: Low-dimensional Systems and Nanostructures;2002-10
5. Investigation of Superfilling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization;Japanese Journal of Applied Physics;2002-08-15
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