Growth of GaInTlAs layers on InP by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of GaInTlAs layers on InP by molecular beam epitaxy

Published:2001-05 Issue:3 Volume:19 Page:861-870
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Sánchez-Almazán F.,Gendry M.,Regreny P.,Bergignat E.,Grenet G.,Hollinger G.,Olivares J.,Bremond G.,Marty O.,Pitaval M.,Canut B.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.1359530

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extolling thermoelectric properties of incommensurate (IC) TlBiSe2 polycrystals prepared by melt temperature oscillation method;Ceramics International;2023-02

2. Thallium incorporation during TlInAs growth by low-temperature MBE;Journal of Crystal Growth;2007-04

3. Limits in growing TlGaAs/GaAs quantum-well structures by low-temperature molecular-beam epitaxy;Materials Science and Engineering: B;2006-01

4. Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors;Physical Review B;2005-09-27

5. Thallium incorporation into GaAs(001) grown by solid source MBE: critical thickness and stability under annealing;Journal of Crystal Growth;2005-02

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