Amorphous silicon layer characteristics during 70–2000eV Ar+-ion bombardment of Si(100)-Reference-Cited by-同舟云学术

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Amorphous silicon layer characteristics during 70–2000eV Ar+-ion bombardment of Si(100)

Published:2006-09 Issue:5 Volume:24 Page:1933-1940
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Stevens A. A. E.,Kessels W. M. M.,van de Sanden M. C. M.,Beijerinck H. C. W.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2244535

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Wafer Bonding;Surface and Interface Science;2020-01-17

3. Simulation of Ion Beam Irradiation Effects in Perovskite Oxide Memristors;Advanced Materials Research;2014-04

4. Effects of Ion Beam Irradiation on NanoscaleInOxCooper-Pair Insulators;International Journal of Photoenergy;2013

5. Absorbed dose assessment in particle-beam irradiated metal-oxide and metal-nonmetal memristors;Nuclear Technology and Radiation Protection;2012

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