Growth temperature dependent evolution of the interface structure in Co[sub 2]FeSi∕GaAs(001) hybrid structures
Author:
Publisher
American Vacuum Society
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spin generation in completely MBE-grown Co2FeSi/MgO/GaAs lateral spin valves;Physical Review Materials;2019-07-08
2. Epitaxial growth of Co2FeSi/MgO/GaAs(0 0 1) heterostructures using molecular beam epitaxy;Journal of Crystal Growth;2019-04
3. Heusler compounds and spintronics;Progress in Crystal Growth and Characterization of Materials;2016-06
4. Half-Metallic Magnetism of Quaternary Heusler Compounds Co2Fe x Mn1−x Si(x =0,0.5, and 1.0): First-Principles Calculations;Journal of Superconductivity and Novel Magnetism;2015-11-29
5. Ultrathin MgO diffusion barriers for ferromagnetic electrodes on GaAs(001);Nanotechnology;2015-04-01
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