Effects of etch chemistry on SF6-based tungsten etching by electron cyclotron resonance reactive ion etching
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Published:1994-11
Issue:6
Volume:12
Page:3351
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
2 articles.
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1. Wet and Dry Etching Materials;Handbook of Chemicals and Gases for the Semiconductor Industry;2002-07-15
2. Cl2‐Based Dry Etching of GaAs, AlGaaAs, and GaP;Journal of The Electrochemical Society;1996-06-01